Recent advances on physico-chemical characterization of passive films by EIS and differential admittance techniques
نویسندگان
چکیده
Thin Nb2O5 anodic films ( 20 nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported. 2006 Elsevier Ltd. All rights reserved.
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تاریخ انتشار 2006